Wideband model of a reflective tensile-strained bulk semiconductor optical amplifier

作者: M. J. Connelly

DOI: 10.1117/12.2051657

关键词:

摘要: Reflective semiconductor optical amplifiers (RSOAs) have shown promise for applications in WDM networks and fiber ring mode-locked lasers. Polarization insensitive SOAs can be fabricated using tensile-strained bulk material a rectangular cross section waveguide. The introduction of tensile strain used to compensate the different confinement factors experienced by waveguide TE TM modes. There is need models that predict RSOA static characteristics such as dependency signal gain on bias current input power, amplified spontaneous emission spectrum noise figure. In this paper we extend our prior work non-reflective develop model includes facet reflections. uses detailed band structure description, which determine wavelength carrier density additive emission. full geometrical description amplifier waveguide, including taper position TE/TM factors. are described travelling-wave equations numerically solved conjunction with rate equation. geometric parameters commercially available RSOA. versatility several simulations SOA operational well internal variables density.

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