Numerical Analysis of Gain Saturation, Noise Figure, and Carrier Distribution for Quantum-Dot Semiconductor-Optical Amplifiers
作者： Jin-Long Xiao , Yong-Zhen Huang
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摘要: The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). carrier photon distributions in the longitudinal direction as well energy dependent facet reflectivity accounted rate equations, which solved with output amplified spontaneous emission spectrum iterative variables. of occupation probabilities spectral-hole burning presented electrons excited ground states quantum dots. power 19.7 dBm device 20.6 dB obtained a QD-SOA cavity length 6 mm at bias current 500 mA. influences electron intradot relaxation time QD capture on simulated 1, 30, 60 ps 5, 10 ps. low 3.5 is expected due to strong polarization sensitive emission. characteristics versus input signal QD-SOAs similar that linear clamping by vertical laser fields.
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