Ferroelectric domain morphologies of (001) PbZr1−xTixO3 epitaxial thin films

摘要: Ferroelectric domain morphologies in (001) PbZr1−xTixO3 epitaxial thin films were studied using the phase-field approach. The film is assumed to have a stress-free top surface and subject biaxial substrate constraint. Both electrostatic open-circuit short-circuit boundary conditions on surfaces considered. simulations indicated that addition known tetragonal rhombohedral phases, an orthorhombic phase becomes stable under large tensile constraints. structure contains (100) (010) 90° walls (110) (1–10) 180° walls. For film, are found be along {101}, (100), of prototypical cubic cell. It shown condition compressive constraint enhance out-of-plane polarization component while suppress it. also t...