作者: Taehee Cho , Jong-Wook Kim , Jae-Eung Oh , Jeong-Woo Choe , Songcheol Hong
DOI: 10.1143/JJAP.38.2442
关键词:
摘要: We fabricated a quantum dot infrared photodetector (QDIP) with 5-stacked self-organized InAs dots embedded in high electron mobility transistor-like modulation doped structure and utilize lateral transport. A peak response of the QDIP appeared at λ=10.5 µm T=80 K. also found that device exhibits bias-dependent responsivity.