作者: Victor Ryzhii
DOI: 10.1143/JJAP.40.L148
关键词:
摘要: We calculate the photocurrent in realistic quantum dot infrared photodetectors (QDIPs) using a developed device model. This model takes into account space charge and self-consistent electric potential QDIP active region, activation character of electron capture its limitation by Pauli principle, thermionic emission from QDs injection electrons emitter contact existence punctures between QDs. The yields as function structural parameters, applied voltage, intensity. calculated dependences are agreement with available experimental data. obtained results point way for optimization QDIPs order to realize their advantages.