作者: Naoto Horiguchi , Toshiro Futatsugi , Yoshiaki Nakata , Naoki Yokoyama , Tanaya Mankad
DOI: 10.1143/JJAP.38.2559
关键词:
摘要: We report the quantum dot infrared photodetector using modulation doped InAs self-assembled dots. By doping, it is possible to remove effect of dopants on energy level in dots and attribute clearly photocurrent carrier excitation The detector was observed up 30 K. peak polarization dependence are comparable electron from ground state conduction band edge GaAs barriers.