Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition-Grown Monolayer MoS 2 by Conductive Atomic Force Microscopy
作者： Filippo Giannazzo , Matteo Bosi , Filippo Fabbri , Emanuela Schilirò , Giuseppe Greco
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摘要: … using small flakes exfoliated from parent bulk crystals, … mechanism responsible for mobility degradation in uncapped MoS 2 transistors.1 As this scattering mechanism in 2D materials is …
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