Method for making a photoresist layer having increased resistance to blistering, peeling, lifting, or reticulation

摘要: A method for making a photoresist layer includes forming adjacent substrate and patterning the layer. The may include at least one of solvent water. then be heated exposed to ultraviolet light during heating reduce water therein. As result, formation gases in ion implantation is reduced, which thus reduces damage from blistering, peeling, lifting, or reticulation, example. formed have thickness greater than about 2 μm, example, block high-current, high-dosage, high-energy implantation. Exposing exposing having power density range 200 500 mW/cm , and, more preferably, 270 360 wavelength 300 nm, 400 seconds temperature 150° C. 250° C., preferably 230° Furthermore, maintaining high 15 60 seconds.