Method of manufacturing a semiconductor device
作者： Oda Katsuya , Washio Katsuyoshi
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摘要: A semiconductor device having an MODFET and at least one other formed on identical substrate, in which intrinsic region for the is by selective growth a groove substrate insulation film side wall of groove, single-crystal silicon bottom disclosed. The step between mounted together can be thereby decreased, each devices reduced size integrated to high degree, interconnection length shortened reduce power consumption.
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