作者: R.K. Sadhir , H.E. Saunders , A.I. Bennett
DOI: 10.1109/ELINSL.1988.13889
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摘要: Films produced by plasma deposition of a mixture tetramethylsilane (TMS) and ammonia (NH/sub 3/) at different substrate temperatures were studied. The intent was to produce films comprising organo-silicon polymers with inorganic-type silicon nitride. Measurements the rate deposition, composition, structure electrical properties (over wide range frequency) deposited various are reported discussed. Parameters such as flow rates, RF power, position held constant. An attempt is made correlate composition. >