Schottky barriers on layered semiconductors: a comparison between van der Waals and non van der Waals faces
作者： A. Klein , J. Lehmann , C. Pettenkofer , W. Jaegermann , M. Lux-Steiner
DOI: 10.1016/0169-4332(93)90563-Q
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摘要: Photoemission studies using synchrotron radiation and line sources have been performed to study the Schottky barrier formation of Cu Au on layered type semiconductors MoS2 WSe2. In addition van der Waals planes an edge plane, which contains crystal c-axis, was prepared by cutting thicker crystals (1–2 mm) in UHV. The double doublet structures observed core level spectra cut are interpreted as two electronically different states. contrast show Fermi pinning also increased reactivity. change position during metal deposition is for cleaved surfaces, indicating that mechanisms involved.
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