A detailed analysis of GOS defects in MOS transistors: testing implications at circuit level
作者： J. Segura , C. De Benito , A. Rubio , C.F. Hawkins
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摘要: The properties of Gate Oxide Short defects (GOS) in CMOS circuits are investigated identifying the most relevant parameters that determine behavior a defective device. Electrical models defect developed and compared with experimentation. Depending upon location transistor type, GOSs resistive, diode, parasitic MOSFET or BJT. We also investigate necessary conditions to detect GOS at circuit level, providing bases for an efficient ATPG approach.
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