CMOS IC reliability indicators and burn-in economics
作者： A.W. Righter , C.F. Hawkins , J.M. Soden , P. Maxwell
关键词:
摘要: Sensitive I/sub DDQ/ and LVMF (low V/sub DD/, maximum frequency) tests were done to examine reliability indicators burn-in economics for CMOS ICs. These experiments used 3,495 1 Mb SRAMs special tests, life failure analysis. was measured at the DD/ tolerated by IC, ranging from 40% 60% above nominal DD/. data indicate that elevated voltage screening can replace ICs, including ICs poor quality (rogue or maverick) lots. A low risk group (27% of population) failed only identified signatures tests. Two other defect classes examined this yield reclamation potential
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