IDDQ testing of CMOS opens: an experimental study
作者： A.D. Singh , H. Rasheed , W.W. Weber
关键词:
摘要: IDDQ testing is known to be very effective in detecting shorts CMOS circuits. It has also been reported that open defects lead "floating" transistor gates can detected if the gate acquires a sufficient voltage leak measurable current. Recent experiments evaluating new on-chip sensor indicated possibility of additional detection mechanisms for other types failures, including source and drain connections. To investigate this more detail, we designed fabricated two test chips technology containing 74181 ALU circuit. Our include capability replacing, one at time, individual cells circuits with back up each contain single defect. In way addition fault free circuits, total 59 faulty configured, different was found random vectors 48 defects. Analysis experimental data reveals explain floating failures.
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sci-hub.se 参考文章(13)
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