Hardware implementation and characterization of SiC-based hybrid three-phase rectifier employing third harmonic injection
作者： M. Makoschitz , M. Hartmann , H. Ertl
DOI: 10.1109/APEC.2016.7467844
关键词:
摘要: A recently proposed third harmonic injection rectifier (two half-bridge legs) - serving as optional solution for passive three-phase diode bridge systems with LC output filter is characterized by unity power factor (λ ≈ 1) and low input currents (THD < 5%). The at hand, furthermore sticks out of the crowd due to a very number active switches compared similar electronic circuits based on same (third injection) principle. Additionally, more establishing reliable SiC-MOSFET allows an optimized design higher switching frequencies without seriously impairing efficiency total system. proper components circuit therefore required several operating modes optimization possibilities are existing. Besides basic considerations control structures topology limitations, also various implementation issues discussed. Finally, experimental results laboratory prototype 10 kW/72 kHz system using SiC-MOSFETs verifies behaviour upgrade.
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