Phase shifting mask wherein light transmitted through second transmission areas intensifies light through first transmission areas

摘要: An improved phase shifting mask suitable to form rectangular isolated fine patterns of a repetitive arrangement structure is disclosed. The includes square forming first and second light transmission areas disposed alternately repetitively so that the ratio between pattern width distance centers may be about 1:2. provide having different by 180 degrees from through areas. Interference two kinds reduces intensity outside enhance resolution. Further, side lobe intensifies main an adjacent it contributes formation good pattern. can applied contact holes semiconductor integrated circuit which are repeat structure.