Pattern exposing method using phase shift and mask used therefor
作者： Tamae c , o Fujitsu Limited Nakagawa , o Fujitsu Limited Haruki , o Fujitsu Limited Tabata , Kenji c
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摘要: A pattern exposing method forms a predetermined resist (41, 42, 42A) on substrate (5) by first layer (39) which is formed the using reticle (6) includes for corresponding use of phase shift light transmitted through reticle, developing exposed (39), second (40) entire surface (5), including top (6, 14) has where overlaps at least part pattern, and so that removed formed.
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