On the Mechanism of Anisotropic Etching of Silicon

摘要: A new model is proposed that explains the anisotropy of etch rate single crystalline silicon in certain etchants. It inspired from theories crystal growth. We assume (111)-face flat on an atomic scale. Then should be governed by a nucleation barrier one layer deep cavities. The origin formation too small cavity increases free energy system due to step-free energy. and undersaturation governs activation rate. Having largest energy, etches slowest. qualitatively why etching isotropic etchants anisotropic others.