METHOD FOR MANUFACTURING ULTRA-THIN SILICON STRAIN GAUGE
作者： Choi Jun Hwan , Kim Jung Sik
DOI:
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摘要: The present invention provides a method of manufacturing an ultra-thin silicon strain gauge, the including following steps: (a) preparing on insulator (SOI) substrate having structure in which support substrate, oxide (SiO_2) layer, and (Si) layer are sequentially laminated; (b) doping SOI with boron (B); (c) annealing boron-doped layer; (d) forming electrode metal (e) patterning to form electrode; (f) gauge pattern through dry etching; (g) protective using photoresist (PR); (h) removing wet etching by solution buffered etchant (BOE) additive separate from substrate. According invention, when separating/manufacturing process is performed solution, added BOE so that it possible manufacture (less than 20 μm) stably economically.
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