Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors
作者： Daisuke Ito , Norifumi Fujimura , Takeshi Yoshimura , Taichiro Ito
DOI: 10.1063/1.1564862
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摘要: Ferroelectric properties of YMnO3 epitaxial films were studied. The ferroelectric epitaxially grown (0001) on (111)Pt/(0001)sapphire (epi-YMO/Pt) with an excellent crystallinity compared to (0001)-oriented poly crystalline (111)Pt/ZrO2/SiO2/Si. epi-YMO/Pt had saturated polarization–electric-field (P–E) hysteresis loops, a remanent polarization (Pr) 1.7 μC/cm2 and coercive field (Ec) 80 kV/cm. fatigue property showed no degradation up 1010 measured cycles. These results suggested that the suitable material for ferroelectric-gate field-effect transistors. Consequently, (0001)YMnO3 Y2O3/Si (epi-YMO/Si) fabricated. epi-YMO/Si capacitor almost equivalent epi-YMO/Pt. It was recognized exhibited type C–V loop width memory window 4.8 V, which i...
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