Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

摘要: Memory retention characteristics of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field effect transistors (FETs) were investigated in detail using a simple structure, referred to as quasi-MFMIS, which one electrode the metal–ferroelectric–metal (MFM) capacitor is connected gate conventional metal–oxide–semiconductors (MOS) FET an external interconnection cable. It was found that memory window MFMIS quickly lost (after about 1000 s) and from comparison with simulations, this attributed mainly decrease ferroelectric polarization due depolarization inevitably remaining film during retention.