Ionization of xenon Rydberg atoms at oxidized Si(1 0 0) surfaces
作者： D.D. Neufeld , H.R. Dunham , S. Wethekam , J.C. Lancaster , F.B. Dunning
DOI: 10.1016/J.SUSC.2007.12.042
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摘要: Abstract The ionization of xenon Rydberg atoms excited to the lowest states in n = 20 Stark manifold at Si(1 0 0) surfaces possessing a robust (∼10 A) native oxide layer is investigated. data show that sizeable fraction incident are ionized relatively far from surface through enhanced tunneling due presence localized stray fields associated with charging or inhomogeneities. A simple model presented justify this assertion.
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