Preparation and investigation of VOx thin films of n- and p-types

摘要: Abstract In this work we present first results on the synthesis of vanadium oxide semi-transparent conducting thin films p - and n -types. The were deposited by thermal evaporation method in vacuum, on: silicon, glass, sapphire, gold substrates. Temperature substrate during deposition was set around 250 °C. As a -type conductivity. Thermal annealing at 420 °C as-deposited air atmospheric pressure resulted change conductivity type. Optical, electrical properties studied. topography studied using AFM microscope. P–N structures created VO x silicon glass Electrical measurements had shown non-linear behaviour samples.