Electrode structure for silicon carbide semiconductors
作者： Mitsuhiro Shigeta , Atsuko Uemoto , Katsuki Furukawa , Akira Suzuki
DOI:
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摘要: An electrode structure for a silicon carbide single-crystal semiconductor in which the surface of is laminated with metal layer titanium, aluminum, chromium or molybdenum, and an electrically conductive protective formed over to provide ohmic electrode.
lens.org 参考文章(4)
Mitsuru Ura, Satoru Ogihara, Yukio Takeda, Kousuke Nakamura, Kunihiro Maeda, Electrically insulating silicon carbide sintered body ,(1982)
Yukio Takeda, Kousuke Nakamura, Tokio Ohkoshi, Yasuo Matsushita, Semiconductor device having electrically insulating substrate of SiC ,(1982)
Federico Sequeda, The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication JOM. ,vol. 37, pp. 54- 60 ,(1985) , 10.1007/BF03258746
Hiroaki Hachino, Yasutoshi Kurihara, Kousuke Nakamura, Semiconductor device using SiC as supporter of a semiconductor element ,(1980)