Polycide gate FET with salicide

摘要: A process for forming a field-effect-transistor structure upon silicon substrate includes the steps of sequentially depositing polysilicon layer and refractory metal silicide over gate oxide heating same to form polycide structure. After etching composite define gate, spacer layers are formed cover lateral edges structure, transition is deposited bare surrounding source drain diffused regions. The annealed react with in thereby lower sheet resistance gate. also reacts regions silicides lowering Unreacted removed from upper surface substrate, subsequent glass deposition, contact opening, metalization may be performed usual manner.