Mechanisms of growth and defect properties of epitaxial SiC
作者： F. La Via , M. Camarda , A. La Magna
DOI: 10.1063/1.4890974
关键词:
摘要: In the last ten years, large improvements in the epitaxial silicon carbide processes have been made. The introduction of chloride precursors, the epitaxial growth on large area …
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