MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers—a review

摘要: Nanometer-size quantum whiskers of InAs and GaAs have been fabricated by low-pressure MOCVD. Time-integrated time-resolved photoluminescence wires diameters 200, 100, 70, 50 nm studied. The temperature dependence PL peak energy was found to follow the same variation as bandgap GaAs, Varshni's theory has used explain dependence. main channel radiative recombination be due free excitons. nonuniformity in diameter lattice phonon interactions were considered understand origin linewidth. From surface lifetimes measured directly. Surface velocities evaluated correlated wire diameter. quantum-size-dependent spatial part electronic wave function thought responsible for velocity with treatment sulphur reduced depletion layer, evidenced from time-integrated spectra. carrier lifetime picosecond time scales at 7 K increased temperature, thus confirming confinement effects. polarization experiments revealed one-dimensional nature whiskers. © 1994 John Wiley & Sons, Inc.