Resistance-Based Modeling for Soft Errors in SOI SRAMs Caused by Radiation-Induced Potential Perturbation Under the BOX
作者： Chin-Han Chung , Daisuke Kobayashi , Kazuyuki Hirose
DOI: 10.1109/TDMR.2018.2873220
关键词:
摘要: Silicon-on-insulator (SOI) technology has been considered capable of developing devices with high tolerance against soft errors. In addition, a thin buried oxide (BOX) layer, reduction in power consumption can be further achieved by applying back bias from under the BOX, which is one SOI technology’s many advantages and appealing to Internet-of-Things space applications. Recently, it was found during heavy ion experiment that static random access memory fabricated thin-BOX exhibited 100-fold error sensitivity when received back-bias. This due long line-type formation multiple cell upsets (MCUs) caused radiation-induced potential perturbation BOX. this paper, resistance-based model developed for evaluation perturbation, predicting device sensitivity. The predictions made are verified simulation. also provides an explanation why MCU only occurs certain radiation environment optimization method reduce perturbation.
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