摘要: The equipment for the fabrication of semiconductor devices has become sophisticated and thus, field competition technologies considered up to now changed. author analyzes causes changes in fields a solution is proposed from view point TCAD technology. purpose activity Selete also described. stock company established by LSI manufacturers(*).
springer.com
sci-hub.st 参考文章(6)
Siegfried Selberherr, Analysis and simulation of semiconductor devices ,(1984)
G. A. Baraff, Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors Physical Review. ,vol. 128, pp. 2507- 2517 ,(1962) , 10.1103/PHYSREV.128.2507
Martin D. Giles, Transient Phosphorus Diffusion Below the Amorphization Threshold Journal of The Electrochemical Society. ,vol. 138, pp. 1160- 1165 ,(1991) , 10.1149/1.2085734
P. M. Fahey, P. B. Griffin, J. D. Plummer, Point defects and dopant diffusion in silicon Reviews of Modern Physics. ,vol. 61, pp. 289- 384 ,(1989) , 10.1103/REVMODPHYS.61.289
R. Kuhnert, C. Werner, A. Schutz, A novel impact-ionization model for 1-µm-MOSFET simulation IEEE Transactions on Electron Devices. ,vol. 32, pp. 1057- 1063 ,(1985) , 10.1109/T-ED.1985.22074
G.K. Wachutka, Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. ,vol. 9, pp. 1141- 1149 ,(1990) , 10.1109/43.62751