3d integrated circuit structure, semiconductor device and method of manufacturing same
作者： Huilong Zhu
DOI:
关键词:
摘要: The present invention discloses a semiconductor device. In one embodiment, the device comprises substrate, diffusion stop layer formed on an SOI layer, MOSFET transistor and TSV in manner of penetrating through where is located; interconnect structure connecting TSV.
lens.org 参考文章(2)
Ming-Fa Chen, Through-Silicon Via With Air Gap ,(2011)
Ching-Kun Huang, Song-Bor Lee, Chuan-Yi Lin, Sheng-Yuan Lin, Method of Forming Through-Silicon Vias ,(2008)