Semiconductor device and structure for heat removal
作者： Zvi Or-Bach , Brian Cronquist , Deepak C. Sekar
DOI:
关键词:
摘要: A device, including: a first layer of transistors, overlaid by at least one interconnection layer, wherein the includes metals such as copper or aluminum; second including overlaying is less than about 0.4 micron thick; and connection path connecting transistors to through-layer via, via material whose co-efficient thermal expansion within 50 percent coefficient expansion.
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