Plasma spraying of semiconductor grade silicon
作者： Raanan Y. Zehavi , James E. Boyle
DOI:
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摘要: A plasma spray gun (10) configured to semiconductor grade silicon form structures including p-n junctions includes parts such as the cathode (16) or anode (22) other (28) facing (34) carrying powder having at least surface portions formed of high purity silicon. The is preferably smaller than 10 microns. dopant may be included in sprayed
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