Sputtered Silicon–Chromium Resistive Films

摘要: The resistivity, temperature coefficient of resistance (TCR), and structure annealed films deposited by de diode sputtering have been studied as a function chromium content over the range 17–33 at.% Cr. resistivity decreases from 0.1 to 0.001 Ω cm TCR changes −1500 +500 ppm/°C with increasing Cr content. Films containing about 27 had lowest TCR. at cathode potential 10 kV more positive for same than sputtered 2.5 kV. Electron micrographs showed latter coarser structure—due either larger grain size (150 Ă compared 50 A) or clumping grains. diffraction patterns indicated nearly amorphous film; CrSi2 was only identifiable phase. average drift μm-wide resistors (1 25 kΩ/square) during 1800 h 200 °C (no load) 125 °C (50 V dc) ±0.5% after an initial 200 aging under conditions.