Through-via vertical interconnects, through-via heat sinks and associated fabrication methods
作者： Brian R. Stoner , Dorota Temple , William Devereux Palmer , Salvatore Bonafede
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摘要: An improved through-via vertical interconnect, heat sinks and associated fabrication techniques are provided for. The devices benefit from an organic dielectric layer (18) that allows for low-temperature deposition processing. processing used to form the interconnects formation of at any point in semiconductor device, including post-formation active circuitry. present invention fabricated so as insure conformal thickness various layers interconnect constructs. As such, can be formed with a high aspect ratio, range about 4:1 10:1, substrate diameter.
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