In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

作者: Zheng Liu , Lulu Ma , Gang Shi , Wu Zhou , Yongji Gong

DOI: 10.1038/NNANO.2012.256

关键词:

摘要: … planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN … The resulting graphene/h-BN atomic layers can be peeled off the growth …

参考文章(28)
Martina Corso, Willi Auwarter, Matthias Muntwiler, Anna Tamai, Thomas Greber, Jurg Osterwalder, Boron nitride nanomesh. Science. ,vol. 303, pp. 217- 220 ,(2004) , 10.1126/SCIENCE.1091979
Régis Decker, Yang Wang, Victor W. Brar, William Regan, Hsin-Zon Tsai, Qiong Wu, William Gannett, Alex Zettl, Michael F. Crommie, Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy Nano Letters. ,vol. 11, pp. 2291- 2295 ,(2011) , 10.1021/NL2005115
Li Song, Lijie Ci, Hao Lu, Pavel B. Sorokin, Chuanhong Jin, Jie Ni, Alexander G. Kvashnin, Dmitry G. Kvashnin, Jun Lou, Boris I. Yakobson, Pulickel M. Ajayan, Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers Nano Letters. ,vol. 10, pp. 3209- 3215 ,(2010) , 10.1021/NL1022139
Andrii Goriachko, He, Marcus Knapp, Herbert Over, Martina Corso, Thomas Brugger, Simon Berner, Juerg Osterwalder, Thomas Greber, Self-assembly of a hexagonal boron nitride nanomesh on Ru(0001). Langmuir. ,vol. 23, pp. 2928- 2931 ,(2007) , 10.1021/LA062990T
D. R. Smith, Willie J. Padilla, D. C. Vier, S. C. Nemat-Nasser, S. Schultz, Composite Medium with Simultaneously Negative Permeability and Permittivity Physical Review Letters. ,vol. 84, pp. 4184- 4187 ,(2000) , 10.1103/PHYSREVLETT.84.4184
D.J. Kester, K.S. Ailey, R.F. Davis, K.L. More, Phase evolution in boron nitride thin films Journal of Materials Research. ,vol. 8, pp. 1213- 1216 ,(1993) , 10.1557/JMR.1993.1213
Shu-Jen Han, Keith A. Jenkins, Alberto Valdes Garcia, Aaron D. Franklin, Ageeth A. Bol, Wilfried Haensch, High frequency graphene Voltage amplifier Nano Letters. ,vol. 11, pp. 3690- 3693 ,(2011) , 10.1021/NL2016637
T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, L. A. Ponomarenko, L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, Field-effect tunneling transistor based on vertical graphene heterostructures. Science. ,vol. 335, pp. 947- 950 ,(2012) , 10.1126/SCIENCE.1218461
E. Rokuta, Y. Hasegawa, K. Suzuki, Y. Gamou, C. Oshima, A. Nagashima, PHONON DISPERSION OF AN EPITAXIAL MONOLAYER FILM OF HEXAGONAL BORON NITRIDE ON NI(111) Physical Review Letters. ,vol. 79, pp. 4609- 4612 ,(1997) , 10.1103/PHYSREVLETT.79.4609
Mark P. Levendorf, Cheol-Joo Kim, Lola Brown, Pinshane Y. Huang, Robin W. Havener, David A. Muller, Jiwoong Park, Graphene and boron nitride lateral heterostructures for atomically thin circuitry Nature. ,vol. 488, pp. 627- 632 ,(2012) , 10.1038/NATURE11408