Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films

摘要: Atomic Layer Epitaxy (ALE) is a chemical vapor phase thin film deposition method which based on saturative surface reactions. As the growing in self-limiting manner ALE promising to deposit thin, high-quality films for micro- and optoelectronics. In present paper of different dielectric oxides, conducting oxides as well nitrides reviewed giving emphasis precursors their effect growth mechanisms properties.