The Gate Hysteresis in Single Electron Transport Driven by Surface Acoustic Wave (SAW/SET) Devices
作者： Li Song , Shuwei Chen
DOI: 10.1007/S10909-017-1799-6
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摘要: We study the gate hysteresis behavior in single electron transport driven by surface acoustic wave (SAW/SET) devices over a wide temperature range from 1.7 to 200 K. From dependence, we come conclusion that SAW/SET arises combination of screening effect state and tunneling between moving quantum dot impurity dot. In addition, when perpendicular magnetic field is applied sample, changes substantially. A competition voltage on determining electronic function considered as reason for experimental results.
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