Transport hysteresis in AlGaAs/GaAs double quantum well systems with InAs quantum dots
作者： E S Kannan , Gil-Ho Kim , I Farrer , D A Ritchie
DOI: 10.1088/0953-8984/19/50/506207
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摘要: We report on the charge storage effect of InAs quantum dots (QDs) embedded in upper well AlGaAs/GaAs double structure. Zero field longitudinal resistivity and Hall resistance at weak magnetic fields exhibited a hysteresis during sweeping gate voltage due to accumulation charges dots. On reverse voltage, accumulated are prevented from being rapidly depleted screening two-dimensional electron gas, which could significantly enhance operation reliability QD-based non-volatile memory devices.
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