Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures
作者： K Ensslin , T Feil , P Mensch , W Wegscheider , T Ihn
DOI: 10.1088/1367-2630/12/4/043007
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摘要: In this work, we investigate high-mobility two-dimensional electron gases in AlxGa1-xAs heterostructures by employing Schottky-gate-dependent measurements of the samples' density and mobility. Surprisingly, found that two different sample configurations can be set situ with mobilities differing a factor more than wide range densities. This observation is discussed context charge redistributions between doping layers relevant for design future gateable gases.
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