Fabricating polysilicon mos devices and passive esd devices
作者： Michael J. Hauser , John J. Ellis-Monaghan , Anthony K. Stamper , Zhong-Xiang He , Junjun Li
DOI:
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摘要: A semiconductor fabrication is described, wherein a MOS device and MEMS fabricated simultaneously in the BEOL process. silicon layer deposited etched to form film for lower sacrificial device. conductive atop metal gate first upper electrode. dielectric vias are formed layer. Another second electrode three electrodes other an The films then removed via venting holes.
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