X-ray dosimetric characteristics of AgGaS2 single crystals grown by chemical vapor transport
作者： S. M. Asadov , S. N. Mustafaeva , D. T. Guseinov
DOI: 10.1134/S0020168517050028
关键词:
摘要: Using chemical vapor transport, we have grown AgGaS2 single crystals possessing large room-temperature X-ray induced conductivity and sensitivity coefficients, which allows the to be recommended for use as key elements of various uncooled very fast detecting devices systems.
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