Preparation of thermally deposited Cux(ZnS)1-x thin films for opto-electronic devices
作者： Biswajit Barman , Kasturi V. Bangera , G.K. Shivakumar
DOI: 10.1016/J.JALLCOM.2018.09.192
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摘要: Abstract Zinc sulfide thin films have been doped with copper atoms to investigate their efficiency as transparent conductor layers. Cux(ZnS)1-x were deposited on glass substrate using thermal evaporation technique by varying the Cu concentration (x = 0.01, 0.02, 0.03, 0.05, 0.10 and 0.25). The prepared characterized XRD, FE-SEM, EDS UV–Vis spectroscopy. X-ray diffraction studies revealed that are crystalline in nature well oriented along (111) direction cubic crystal structure. Crystallite size increases increase concentration. FE-SEM showed homogenous pin-hole free. All exhibited p-type conductivity. It was also observed band gap of vary from 3.48 eV 2.60 eV when content varies 0 0.25. At a x = 0.03, hole conductivity 1.9 × 103 S/m retaining an optical transparency ∼73% visible spectra. This combination for such low is, our knowledge, best reported date.
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