Heterojunctions based on photochemically deposited CuxZnyS and electrochemically deposited ZnO
作者： Masaya Ichimura , Yosuke Maeda
DOI: 10.1016/J.SSE.2015.02.016
关键词:
摘要: Abstract Cu x Zn y S has p-type conductivity for a wide range of content and band gap (>3 eV) with Zn-rich composition. In this work, films were deposited by the photochemical deposition, where film was on substrate immersed in solution owing to reactions activated UV light. The deposition contained 5 mM CuSO 4 , 25 mM ZnSO 400 mM Na 2 O 3 . showed transmission larger than 70% visible range, its about 3.7 eV. pn heterostructures fabricated depositing ZnO pulse-biased electrochemical from containing 100 mM Zn(NO ) When thickness 1 μm, rectification properties weak photovoltaic effects.
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