作者: Timothy M. Miller , John H. Abrahams , Christine A. Allen
DOI: 10.1016/J.NIMA.2005.12.067
关键词:
摘要: Abstract We report a fabrication process for deep etching silicon to different depths with single masking layer, using standard and exposure techniques. Using this technique, we have incorporated notch in the support walls of transition-edge-sensor (TES) bolometer array during detector back-etch, while simultaneously creating cavity behind detector. The notches serve receive beams separate component, Backshort-Under-Grid (BUG), an adjustable height quarter-wave backshorts that fill cavities each pixel array. backshort spacing, set prior securing array, can be controlled from 25 300 μm by adjusting only few steps. In addition interlocking provide positioning structural ∼1 mm pitch, 8×8 This is being into developing TES use far-infrared astronomy. technique machining used fabricate will discussed.