Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology
作者： Kazuo Yamada , Kenji Nomura , Katsumi Abe , Satoshi Takeda , Hideo Hosono
DOI: 10.1063/1.4896948
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摘要: The effect of an ambient atmosphere with a positive bias constant current stress (CCS) and negative illumination (NBIS) on the stability amorphous In-Ga-Zn-O thin film transistors (TFTs) is examined by utilizing glass-hermetic-sealant moisture permeability less than 10−6 g/m2 · day. In CCS test, threshold voltage shift (ΔVth) was remarkably suppressed in glass-sealed TFTs. unsealed resin-sealed TFTs exhibited large ΔVth values. During NBIS tests, had almost same as resin sealed Among different TFTs, no significant differences were observed voltage, subthreshold swing saturation mobility function photon energy. It concluded that molecules primary origin instability ΔVth, induced CCS, but they not related to instability. major role effective passivation layers test simply block out effects, reduce extra density states at/near surface back channel.
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