In 2 O 3 Thin-Film Transistors via Inkjet Printing for Depletion-Load nMOS Inverters
作者： J. Leppaniemi , K. Eiroma , H. S. Majumdar , A. Alastalo
关键词:
摘要: Ability to digitally control the amount of a deposited material is one many advantages inkjet printing. In this letter, we demonstrate applicability printing for fabrication depletion-load nMOS inverters based on metal oxide thin-film-transistors (TFTs) from printed precursors where threshold voltage TFTs controlled by adjusting thickness semiconductor layer. Enhancement- and depletion-mode n-type In2O3 were fabricated In-nitrate precursor using two strategies: 1) multilayer multinozzle 2) single-layer single-nozzle in perpendicular or parallel TFT channel. with saturation mobility up $\sim 2.4$ cm2/( $\text {V}\cdot \text {s}$ ) ON/OFF-ratio $10^{7}$ obtained after annealing at 300 °C. Devices connected as showed gain 26$ Si/SiO2 substrate, an inverter flexible polyimide substrate atomic layer Al2O3 dielectric was demonstrated maximum 45$ .
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