Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors
作者： Jae-sung Kim , Byung Su Oh , Mingxing Piao , Min-Kyu Joo , Ho-Kyun Jang
DOI: 10.1063/1.4904843
关键词:
摘要: We report an investigation of the effects low-temperature annealing on electrical properties amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize charge carrier concentration, which is related density oxygen vacancies. The field-effect mobility found decrease as a function owing presence band-tail states. By employing transmission line method, we show that contact resistance did not significantly contribute changes in device performance after annealing. In addition, using low-frequency noise analyses, trap decreased by factor 10 following at 120 °C. switching operation and on/off ratio a-IGZO TFTs improved considerably
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sci-hub.se 参考文章(28)
Mutsumi Kimura, Takashi Nakanishi, Kenji Nomura, Toshio Kamiya, Hideo Hosono, None, Trap densities in amorphous-InGaZnO4 thin-film transistors Applied Physics Letters. ,vol. 92, pp. 133512- ,(2008) , 10.1063/1.2904704
Tze-Ching Fung, Chiao-Shun Chuang, Charlene Chen, Katsumi Abe, Robert Cottle, Mark Townsend, Hideya Kumomi, Jerzy Kanicki, Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors Journal of Applied Physics. ,vol. 106, pp. 084511- ,(2009) , 10.1063/1.3234400
Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Mutsumi Kimura, Toshio Kamiya, Hideo Hosono, None, Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Applied Physics Letters. ,vol. 99, pp. 093507- ,(2011) , 10.1063/1.3633100
Hai Q. Chiang, Brian R. McFarlane, David Hong, Rick E. Presley, John F. Wager, Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors Journal of Non-crystalline Solids. ,vol. 354, pp. 2826- 2830 ,(2008) , 10.1016/J.JNONCRYSOL.2007.10.105
Ken Watanabe, Dong-Hee Lee, Isao Sakaguchi, Kenji Nomura, Toshio Kamiya, Hajime Haneda, Hideo Hosono, Naoki Ohashi, Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere Applied Physics Letters. ,vol. 103, pp. 201904- ,(2013) , 10.1063/1.4829996
Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing Thin Solid Films. ,vol. 518, pp. 3017- 3021 ,(2010) , 10.1016/J.TSF.2009.10.132
Pradipta K. Nayak, M. N. Hedhili, Dongkyu Cha, H. N. Alshareef, High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment Applied Physics Letters. ,vol. 100, pp. 202106- ,(2012) , 10.1063/1.4718022
E. Fortunato, P. Barquinha, R. Martins, Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances Advanced Materials. ,vol. 24, pp. 2945- 2986 ,(2012) , 10.1002/ADMA.201103228
Kenji Nomura, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono, Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing Applied Physics Letters. ,vol. 93, pp. 192107- ,(2008) , 10.1063/1.3020714
P. Liu, T.P. Chen, Z. Liu, C.S. Tan, K.C. Leong, Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films Thin Solid Films. ,vol. 545, pp. 533- 536 ,(2013) , 10.1016/J.TSF.2013.07.084