Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
作者： Keisuke Ide , Yutomo Kikuchi , Kenji Nomura , Mutsumi Kimura , Toshio Kamiya
DOI: 10.1063/1.3633100
关键词: Threshold voltage 、 Bistability 、 Annealing (metallurgy) 、 Optoelectronics 、 Subthreshold conduction 、 Crystallographic defect 、 Amorphous solid 、 Materials science 、 Transistor 、 Thin-film transistor
摘要: Operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) were improved to a subthreshold voltage swing (S) of 217 mV (decade)− 1, a mobility of∼ 11.4 cm2 (Vs)− 1, and a threshold voltage (Vth) of 0.1 V by O3 annealing at a temperature as low as 150° C. However, the O3 annealing at 300° C caused serious deterioration and exhibited a bistable transition between a large S state and a large Vth state. This transition is attributed to incorporation of excess oxygen and associated subgap defects with a negative-U …
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(13)
Mutsumi Kimura, Takashi Nakanishi, Kenji Nomura, Toshio Kamiya, Hideo Hosono, None, Trap densities in amorphous-InGaZnO4 thin-film transistors Applied Physics Letters. ,vol. 92, pp. 133512- ,(2008) , 10.1063/1.2904704
Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono, Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy Journal of Applied Physics. ,vol. 109, pp. 073726- ,(2011) , 10.1063/1.3560769
Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing Thin Solid Films. ,vol. 518, pp. 3017- 3021 ,(2010) , 10.1016/J.TSF.2009.10.132
Kenji Nomura, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono, Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing Applied Physics Letters. ,vol. 93, pp. 192107- ,(2008) , 10.1063/1.3020714
Seung-Yeol Han, Gregory S. Herman, Chih-hung Chang, Low-temperature, high-performance, solution-processed indium oxide thin-film transistors. Journal of the American Chemical Society. ,vol. 133, pp. 5166- 5169 ,(2011) , 10.1021/JA104864J
Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature. ,vol. 432, pp. 488- 492 ,(2004) , 10.1038/NATURE03090
Kenji Nomura, Akihiro Takagi, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono, Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors Japanese Journal of Applied Physics. ,vol. 45, pp. 4303- 4308 ,(2006) , 10.1143/JJAP.45.4303
Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Hideo Hosono, Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy Applied Physics Letters. ,vol. 92, pp. 202117- ,(2008) , 10.1063/1.2927306
M. ITO, M. KON, C. MIYAZAKI, N. IKEDA, M. ISHIZAKI, Y. UGAJIN, N. SEKINE, "Front Drive" Display Structure for Color Electronic Paper Using Fully Transparent Amorphous Oxide TFT Array IEICE Transactions on Electronics. ,vol. 90, pp. 2105- 2111 ,(2007) , 10.1093/IETELE/E90-C.11.2105
P. W. Anderson, Model for the Electronic Structure of Amorphous Semiconductors Physical Review Letters. ,vol. 34, pp. 953- 955 ,(1975) , 10.1103/PHYSREVLETT.34.953