Device characteristics improvement of a-In–Ga–Zn–O TFTs by low-temperature annealing

摘要: Abstract A low-temperature process to improve performances of a-In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) fabricated at room temperature was examined. Two deposition methods, pulsed laser (PLD) and RF magnetron sputtering were employed deposit the a-IGZO channels. For PLD case, TFT characteristics improved significantly by wet annealing dew point (d.p.) 50 °C 200 °C. sputtered TFTs, a wider range from 100 200 °C It found that ≥ 150 °C when dry employed. On other hand, also μ sat S values, but very large negative threshold voltage ( V th ) shift observed. These results indicate 150 °C is enough obtain mobility as 8 cm 2  Vs − 1 , high provides larger comparable those obtained 400 °C annealing. speculated originates compensated donors in as-deposited films.