作者: P.V. Galiy
DOI: 10.1016/S1350-4487(98)00093-6
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摘要: The characteristics of defect accumulation and radiolysis at CsI crystals under mean energies electron irradiation wide dose rates ranges doses have been investigated by such methods: thermostimulated exoelectron emission (TSEE), Auger spectroscopy (AES) optical absorption (OAS). limit absorbed that lead to defects room temperature in volume also surface stoichiometry violation evaluated. radiolysis, with caesium coagulation metallic phase determined. Some quasi periodic connection process was observed.